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X-band T/R modules, ultra-low noise amplifiers, power amplifiers, 4- to 7-bit digitally controlled phase shifters and step attenuators, gain equalizers, active/passive switches.
Total-power/dicke radiometers, wideband/high-gain low noise amplifiers, noise reduction techniques, power detectors, active/MEMS switches, wideband antennas.
Full-duplex radio, adaptive self-interference cancellation, high-efficiency techniques for power amplifiers, wideband LNAs, dual polarized antennas.
High performance prototype ROICs for thermal and photodetector based IR-FPAs. Published and patented designs targetted at SWIR, MWIR and LWIR imaging applications.
High precision, fully characterized SAR ADC designs for imaging applications. Under testing and development: time-interleaved, moderate resolution SAR ADC for high speed applications.
Biosensor design, fabrication, packaging and characterization, as well as customized electronic instrumentation development from the initial conception to the final prototype device.
Modelling, fabrication and characterization of highly efficient rectenna based solar energy harvesting devices. The design of ultra fast THz diodes, optical and transient characterization of the devices. Targeted to harvest solar energy at high conversion efficiency.
Design and development of high TCR, low noise, multi-quantum well Si/SiGe microbolometers. Hybridization to ROICs and high vacuum packaging under development. Aimed for LWIR imaging systems.
The research objective of our group is to use new technologies, techniques and architectures to develop new integrated devices, sensors/detectors, circuits and systems and explore the continuous advances of micro/nano-electronics to promote their usage and exploitation in real-life application fields.
The group main activities are focused on the development of: CMOS mixed-signal integrated circuits and systems, SiGe-BiCMOS RF and THz integrated circuits and systems and micro/nano devices, sensors/detectors and microelectromechnanical systems (MEMS).
While achieving our research objective, we educate our BSc, MSc and PhD students to become top-level academician, scientist or engineer, who can contribute to science and/or industry by successfully dealing with the challenges and applying the high-level fundamental research and knowledge to advance science and technology.
Prof. Yasar Gurbuz
Three probe stations and measurement equipments to cover 0-300 GHz range.
DC and cryogenic probe stations which are equipped with semi conductor parameter analyzer for device characterization.
Small scale clean room with mask aligner, sputter, dry etcher and fully equipped wet bench.
Two layer mm-WAVE PCB prototyping, ball/wedge wire bonding, flip-chip, and fast access to 3D prototyping.
28 nm - 0.35 μm CMOS and 0.13 - 0.25 μm SiGe BiCMOS design competency from wide range of foundries.
Access to the latest state-of-the-art CAD, computation and characterization softwares from leadling EDA companies.
Five Xeon workstations up to 64 cores and 256 GB RAM equipped with SSDs and central storage.
7,500 m2 state-of-the-art facility located inside Sabanci Universit campus. read more
Hamza and Cerin have got their papers accepted for ISCAS 2020, titled "A 7-Bit 0.22 dB Step Variable Attenuator with Flat States and Low Phase Variation at 1.5-13.5 GHz Using iNMOS Switches" and "A Speed-Enhanced Asynchronous SAR Control Logic based on Two-Phase Handshake Architecture". They are set to give their presentations between May 17-20 in Seville, Spain.
Ilker has attended RFIC 2019 in Boston, MA. He gave a presentation on his paper titled "A 26-GHz Vector Modulator in 130-nm SiGe BiCMOS Achieving Monotonic 10-b Phase Resolution Without Calibration" published in the conference
Berke, Hamza and Ilker have attended MMS 2018 in Istanbul on October 31 - November 02. They gave their presentations on our papers titled "On the Inherent Self-Interference Suppression of Full-Duplex Phased Arrays", "A Wideband (3–13 GHz) 7-Bit SiGe BiCMOS Step Attenuator with Improved Flatness", "0.13μm SiGe BiCMOS W-Band Low-Noise Amplifier for Passive Imaging Systems".
Abdurrahman has attended APMC 2018 in Kyoto, Japan on November 06-09. He gave presentations on our papers titled "High Responsivity Power Detectors for W/D-Bands Passive Imaging Systems in 0.13μm SiGe BiCMOS Technology", "Low-Noise Amplifiers for W-Band and D-Band Passive Imaging Systems in SiGe BiCMOS Technology", "A SiGe BiCMOS Bypass Low-Noise Amplifier for X-Band Phased Array RADARs".
mer has attended ISCAS 2018 in Florence, Italy. He gave presentations on our papers titled "A Novel Approach to Noise Shaping in Digital Pixels for Infrared Imagers using Over-Integration", "High Dynamic Range Smart Pixel Architecture for Infrared Focal Plane Arrays", "Development of Hand-Held Point-of-Care Diagnostic Device for Detection of Multiple Cancer and Cardiac Disease Biomarkers".
Atia has attended SPIE Defense + Commercial Sensing in Orlando, FL. She presented our paaper on Readout IC titled "A low-power CMOS readout IC with on-chip column-parallel SAR ADCs for microbolometer applications".
Arman has attended ISCAS 2017 in Baltimore, MD, on May 28-31. He gave a presentation on our paper titled "A PFM Based Digital Pixel with Off-Pixel Residue Measurement for Small Pitch FPAs" published in TCAS II at the conference.
Elif and Emre has attended SPIE Defense and Comercial Sensing 2017 in Anaheim, CA. They presented our papers in "Infrared Technology and Applications" sessions. Presented papers are: 1, 2 and 3