Arman has attended ISCAS 2017 in Baltimore, MD, on May 28-31. He gave a presentation on our paper titled "A PFM Based Digital Pixel with Off-Pixel Residue Measurement for Small Pitch FPAs" published in TCAS II at the conference.
"Regret is unnecessary. Think before you act." William Shockley Check out our open positions
Many more to come
Achieved so many things
Ready to rock
Many more to come
No time to sleep
Phased Array Systems
X-band T/R modules, ultra-low noise amplifiers, power amplifiers, 4- to 7-bit digitally controlled phase shifters and step attenuators, gain equalizers, active/passive switches.
Total-power/dicke radiometers, wideband/high-gain low noise amplifiers, noise reduction techniques, power detectors, active/MEMS switches, wideband antennas.
5G and Beyond
Full-duplex radio, adaptive self-interference cancellation, high-efficiency techniques for power amplifiers, wideband LNAs, dual polarized antennas.
High performance prototype ROICs for thermal and photodetector based IR-FPAs. Published and patented designs targetted at SWIR, MWIR and LWIR imaging applications.
High precision, fully characterized SAR ADC designs for imaging applications. Under testing and development: time-interleaved, moderate resolution SAR ADC for high speed applications.
Biosensor design, fabrication, packaging and characterization, as well as customized electronic instrumentation development from the initial conception to the final prototype device.
Modelling, fabrication and characterization of highly efficient rectenna based solar energy harvesting devices. The design of ultra fast THz diodes, optical and transient characterization of the devices. Targeted to harvest solar energy at high conversion efficiency.
Design and development of high TCR, low noise, multi-quantum well Si/SiGe microbolometers. Hybridization to ROICs and high vacuum packaging under development. Aimed for LWIR imaging systems.
The research objective of our group is to use new technologies, techniques and architectures to develop new integrated devices, sensors/detectors, circuits and systems and explore the continuous advances of micro/nano-electronics to promote their usage and exploitation in real-life application fields.
The group main activities are focused on the development of: CMOS mixed-signal integrated circuits and systems, SiGe-BiCMOS RF and THz integrated circuits and systems and micro/nano devices, sensors/detectors and microelectromechnanical systems (MEMS).
While achieving our research objective, we educate our BSc, MSc and PhD students to become top-level academician, scientist or engineer, who can contribute to science and/or industry by successfully dealing with the challenges and applying the high-level fundamental research and knowledge to advance science and technology.
Prof. Yasar Gurbuz
DC to THz Measurement
Three probe stations and measurement equipments to cover 0-300 GHz range.
DC and cryogenic probe stations which are equipped with semi conductor parameter analyzer for device characterization.
Class 1000 Clean Room
Small scale clean room with mask aligner, sputter, dry etcher and fully equipped wet bench.
Two layer PCB prototyping, wedge wire bonding and fast access to 3D prototyping.
CMOS and SiGe Technology
65 nm - 0.35 μm CMOS and 0.13 - 0.25 μm SiGe BiCMOS design competency from wide range of foundries.
Leading EDA Software Access
Access to the latest state-of-the-art CAD, computation and characterization softwares from leadling EDA companies.
High Computing Power
Five Xeon workstations up to 64 cores and 256 GB RAM equipped with SSDs and central storage.