• MEMS Switch and MEMS-Variable Capacitor Integrated SiGe BiCMOS Technology Based Monolithic 140 GHz Radiometry and 240 GHz Spectroscopy Frontend Circuits (THzMEMS)

    The main goal of the THzMEMS project is the first time monolithic integration of MEMS switch and tunable capacitors into a 0.13 µm BiCMOS process for THz circuit and system applications. The target applications of the project are 140 GHz passive imaging radiometer and 240 GHz spectroscopy. The main motivation is the enhancement of the performance of switch and tunable capacitor circuit components using the BiCMOS embedded MEMS technology; thus going beyond state of the art performance parameters that can be achieved using available/conventional technologies.

    The main novelty of the THzMEMS project is the first time realization of THz MEMS switch and tunable capacitor in a very high performances BiCMOS process. Together with the zero-level hermetic packaging technology and the high-voltage generation circuits, the developed technology will open the way for very high performance, single chip THz radiometer and spectroscopy systems which cannot be realized using today’s conventional technologies.

    Ongoing
    • Funding Agency:

      TÜBİTAK (P.I. Prof.Volkan Ozguz)

  • Development of High Performance 320x240 and Cost Effective 80x60 Infrared Imaging Modules with Monocrystal SiGe Multiple Quantum Well Bolometer Detectors

    Aim of the project is to develop Multiple Quantum Well (MQW) type detector arrays in mono-crystal Silicon Germanium (SiGe) process being highly sensitive to thermal changes and employed as sensors for the uncooled infrared imaging systems. The high Ge content is proposed to increase the thermal sensitivity of the SiGe MQW referred as the temperature coefficient of resistance (TCR).The project tragets TCR of 4.5%-5% and with an NETD value of 50mK.The framework of project includes the design and fabrication of integrated readout circuits of these detector arrays in SiGe/CMOS technologies, hybridization and packaging the detector arrays and the readout circuits in a vacuumed environment to implement ready-to-use integrated imaging module prototypes. Two types of infrared imaging modules are aimed in this project, high performance modules sensing long wavelengths (LWIR) with 320x240 arrays and 17umx17um pixel sizes and cost-effective modules that are packaged in a lower vacuum level with 80x60 arrays and 17umx17um pixel sizes. 12umx12um pixels will also be demonstrated for the first time in SiGe process.

    Ongoing
    • Funding Agency:

      TÜBİTAK (P.I. Dr.Javed Kolkar)

  • Design of fully integrated 94 GHz radiometer for passive millimeter wave imaging using SiGe BiCMOS technology

    The aim of this project is design of a low NETD (Noise Equivalent Temperature difference) mm-wave radiometer which is used in passive imaging systems. In this project, first of all, the sub blocks of a single chip 94 GHz direct detection radiometer system - such as on chip antenna, LNA, power detector, SPDT and baseband blocks are designed, optimized, fabricated, tested and verified. High performance HBT's of the-state-of-the-art IHP 0.13μm SiGe BiCMOS process is used. As second objective, all of the blocks are integrated to a single chip and verified. As third objective, 2x2 arrays will be formed by this radiometer.

    Ongoing
    • Funding Agency:

      TÜBİTAK

  • Low Power Digital ROIC Architectures and Pixel Core Development for LWIR and MWIR Imaging Applications

    This project aims to develop low power digital readout integrated circuit (DROIC) architectures for LWIR and MWIR bands to be used in cryogenic temperatures. For the LWIR band, a new pixel parallel conversion with coarse and fine quantization is proposed based on PFM architecture.With the proposed architecture it is aimed in this project to achieve 100fJ/LSB with 15-bit resolution. Pixel pitch is as small as 15µm in MWIR spectrum (and even smaller) and it is not feasible to put all of the PFM structure under this pixel area. Additionally, it is hard to design 15-bit ADCs with megapixel arrays to support 400Hz frame rate and low power dissipation. The proposed method is to do pixel level coarse quantization using PFM and lower resolution column based ADCs. Since the resolution of column based ADCs is reduced, they can operate at higher speeds with lower power dissipation. The project is implemented in standard CMOS technologies with 16x16 and 32x32 test arrays.

    Ongoing
    • Funding Agency:

      TÜBİTAK (P.I. Prof. Volkan Ozguz)

  • Development of Hand-Held Lab-on-a-chip for the Detection and Quantification of Cancer and Cardiovascular Risk Markers

    Completed
    • Funding Agency:

      TÜBİTAK

  • Heat Harvesting

    Ongoing
    • Funding Agency:

      Lockheed Martin

    • 2013 - 2016 (will continue until 2023)
    • ROIC

    Human Brain Project

    Ongoing
    • Funding Agency:

      EU-FP7-FET Flagship Program

  • Design and Development of X Band Phase Shifter and Attenuator in SiGe BiCMOS Technology

    Completed
    • Funding Agency:

  • Low Quantization Noise and High Charge Storage Capable Digital CMOS ROIC Development for 640x512 LWIR Detectors

    Completed
    • Funding Agency:

      ASELSAN A.Ş. and Ministry of Industry - SANTEZ National Program

  • Low Power, TDI Based Digital ROIC for Scanning 720x8 LWIR Detectors

    Completed
    • Funding Agency:

      ASELSAN A.Ş. and Ministry of Industry - SANTEZ National Program

  • High Dynamic Range (Dual Band) and High SNR ROIC

    Completed
    • Funding Agency:

      ASELSAN A.Ş. and Ministry of Industry - SANTEZ National Program

  • Digital CMOS ROIC with Low Quantization Noise and Charge Storage Capability for IR Imaging Systems

    Completed
    • Funding Agency:

      TÜBİTAK

  • RF Transmitter Based Transducer for Biosensor Applications

    Completed
    • Funding Agency:

      TÜBİTAK

  • X-Band Phase Array Transceiver Module Using SiGe BiCMOS and RFMEMS Technologies

    A transmit/receive module for X-band (8-12 GHz) phased arrays was developed in a 0.25-um SiGe BiCMOS process. The module included a low-noise amplifier (18-22 dB gain, <2 dB NF), a power amplifier (20 dB gain, 20 dBm OP1dB), a 4-bit digitally-controlled passive phase shifter (3-11° RMS phase error, 10-20 dB insertion loss), a variable gain amplifier to compensate PS gain variations and SPDT switches (<2.3 dB insertion loss, >25 dB isolation) to route the signals between TX and RX. The overall T/R module occupies an area of 1.75 x 2.8 = 4.9 mm2. Pad-to-pad measurements demonstrated a gain of 10-11 dB, noise figure of 4-6 dB and IIP3 of -10 dBm in receive mode. In transmit mode, the module achieved a gain of 10-12 dB and OP1dB of 16 dBm. The total power consumption of the chip is 285 mW.

    Completed
    • Funding Agency:

      TÜBİTAK

  • Protein microchip design; cardiovascular risk assessment platform

    Completed
    • Funding Agency:

      DPT

  • BioSensor Development using optical transduction for the detection of cardiovascular risk markers

    .

    Completed
    • Funding Agency:

      TÜBİTAK

  • X Band SiGe Radar Module

    Completed
    • Funding Agency:

      Lockheed Martin

  • TDI-Based Readout Integrated Circuit Development for 288x4 IR Detectors

    Completed
    • Funding Agency:

  • Development of (576x7) Readout Integrated Circuit

    Completed
    • Funding Agency:

  • Development of High Performance Transceiver Sub-Circuits and RF MEMS Passives for IEEE 802.11a/15

    Completed
    • Funding Agency:

      TÜBİTAK

  • Development of micromachined chemical sensors and signal read-out circuitry

    Completed
    • Funding Agency:

      TÜBİTAK